Abstract
We investigated the influence of forming gas annealing (FGA) before and after oxide deposition on the SiO2/4H-SiC interface defect density (Dit). For MOS capacitors (MOSCAPs) that were processed using FGAs at temperatures above 1050°C, CV characterization revealed decreased flat band voltage shifts and stretch-out for different sweep directions and frequencies. Moreover, constant-capacitance deep level transient spectroscopy (CC-DLTS) was performed and showed Dit levels below 1012 cm-2eV-1 for post deposition FGA at 1200°C. Finally, lateral MOSFETs were fabricated to analyze the temperature-dependent threshold voltage (Vth) shift.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
