Improved RFET Performance Using Dual-Aluminum-Contact (DAC)

Abstract

This work presents for the first time the use of dual aluminum contacts (DAC) to improve the performance of reconfigurable field effect transistors (RFET), integrating two aluminum contact in BESOI MOSFET (with and without annealing process). Using TCAD simulations, the charge density in the channel region below the aluminum source contact depends on the channel thickness and bias in the programming gate. This thickness making possible to create a hole’s channel below the Schottky aluminum contact for silicon thickness below the aluminum contacts higher than 30nm, enabling conduction in the dual aluminum contact transistor. The DAC BESOI MOSFET had a current level increase of 3 times for BESOI pMOSFET and 9 times in BESOI nMOSFET compared to using NiSi contacts