Abstract
Resistive switching characteristics of low temperature sol-gel processed (250°C) TiO 2 thin films are investigated. The Pt/TiO 2 /Pt device exhibits bipolar switching with a uniform high resistance state compared to the low resistance state. Reliability and stability of the device is significantly improved by choosing a proper compliance current in the first set operation. The film shows excellent switching properties such as high on/off ratio ( > 20), good cycling endurance, and long retention ( > 10 4 s) at 85°C. The enhanced switching properties are explained by a physical model based on localized generation/recovery of oxygen vacancy defects near the bottom electrode interface.
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