Abstract
Charge-trap based resistive switching (RS) has attracted attention in the resistive random-access memory (RRAM) industry due to its gradual RS behavior for multi-level and synaptic applications. In this work, in order to lower the operating current level closely related to device’s degradation, we applied a hydrogen passivation to Zr<sub>3</sub>N<sub>2</sub> based RRAM devices and investigated the correlation between current level and trap density, such as an interface trap density (<inline-formula> <tex-math notation="LaTeX">$\text{N}_{\mathrm {it}}$ </tex-math></inline-formula>) at the Zr<inline-formula> <tex-math notation="LaTeX">$_{3}\text{N}_{2}/p$ </tex-math></inline-formula>-Si layer and nitride trap density (<inline-formula> <tex-math notation="LaTeX">$\text{N}_{\mathrm {nt}}$ </tex-math></inline-formula>) within Zr<sub>3</sub>N<sub>2</sub> films, for memory cells annealed in conventional N<sub>2</sub> gas as well as H<sub>2</sub> gas. Compared to the N<sub>2</sub>-annealed sample, after H<sub>2</sub> annealing, <inline-formula> <tex-math notation="LaTeX">$\text{N}_{\mathrm {it}}$ </tex-math></inline-formula> is lowered by the hydrogen passivation effect, which results in a reduction of both current level at high resistive state (HRS) and variation of HRS and low resistive state (LRS). As a result, in the H<sub>2</sub> annealed Zr<sub>3</sub>N<sub>2</sub> RRAM cell, we observed a lower operation voltage/current, longer endurance, and larger read margin due to the hydrogen passivation effect.
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