Graphene oxide resistive memories with threshold switching behavior

Abstract

Resistive random-access memories (ReRAMs) are based on a physical phenomenon called resistive switching (RS). Such a phenomenon occurs when the resistance of a dielectric undergoes changes in response to a strong external electric field. This change can be associated with logical level transition. RS process is reversible and can be reproduced countless times. In this work, the goal is to characterize three different devices and to verify if there is influence of the architecture and contact types. By varying the voltage, electrical current measurements were performed on the memory cells using a picoammeter. Through this analysis it is possible to detect SET and RESET of each device. With the expected performance, the current curves are compared as a function of the voltage. All ReRAM cells have sharp transitions in the SET stage. In the RESET process, devices still show an abrupt transition from low resistance state (LRS) to high resistance state (HRS), which is quite similar to the situation in SET stage. Resistive memory devices present threshold switching. As we have the comparison between the matrix and points structures, there is a probability that the architecture of the cell units can influence due to the electric field.