Abstract
We fabricated Fe2O3−x and Ag-doped Fe2O3−x devices with resistive switching behavior by using a radiofrequency cosputtering system. Our results indicated that doping Ag into Fe2O3−x can effectively improve device performance, increasing the data retention test time to beyond 104 s and resulting in switching cycles of approximately ∼3 × 102 times; resistance on/off ratios of approximately ∼103; and mean setting and reset voltages of 0.94 V and −1.35 V, respectively. The improvement in performance had several possible reasons. In our case, conductive filament formation was mainly induced by oxygen vacancies and Ag atoms. X-ray photoelectron spectroscopy showed that oxygen vacancies increased significantly with Ag doping. This phenomenon can improve device performance. Ag atoms served as trap centers, allowing for the easy trapping and release of charges. This effect facilitated the formation of conductive filaments. Ag-doped Fe2O3−x has significant potential for application in resistive switching random access memory devices.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
