Abstract
A nonvolatile resistive switching random access memory (RRAM) device based on the diamond-like carbon (DLC) films and the inert metal electrodes was demonstrated. A typical unipolar resistive switching (RS) behavior without high voltage “forming process” is observed. It exhibits good scaling-down properties when negligible dependence upon the cell area is observed for VSET and IRESET decreases with the reduction of the cell area, which is suitable for practical nonvolatile memory applications. Investigations on the electron transport characteristics at HRS and LRS indicate that Frenkel–Poole emission and Ohmic Laws dominate the LRS and HRS states, respectively. Based on the conduction mechanism studies, the RS behavior is found to arise from the formation and rupture of conductive sp2-like graphitic filaments originating from the connection of conductive sp2-like carbon bonds in the predominantly sp3-like insulating carbon matrix through the electric field induced dielectric breakdown process and thermal fuse effects.
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