Abstract
• HfO 2 /Si 3 N 4 bandgap-engineered trapping layer is applied to nanowire flash device for the first time. • P/E speeds can be significantly improved by bandgap-engineered trapping layer. • The improvement is more obvious on nanowire channel flash device. • Good retention and endurance characteristics are also demonstrated. Effects of HfO 2 /Si 3 N 4 bandgap-engineered trapping layer (BETL) on poly-Si flash memory device are studied for the first time. Planar and nanowire (NW) channel flash memory devices are successfully fabricated to study the effects of BETL. The programming and erasing speeds can be improved by BETL on both planar and NW channel devices, and the improvement is more obvious on NW channel devices with even a lower operation voltage. The device with BETL and NW channel demonstrates the best programming and erasing speeds due to the electric-field enhancement effect and the band-engineering in charge-trapping layer. It also shows good retention and endurance properties, which makes it promising for 3-D memory integration.
Published Version
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