Abstract
The significance of incorporating improved physical models for bandgap narrowing and impact ionization to accurately model the characteristics of the parasitic transistor is discussed. Accurate simulation of the bipolar breakdown of ultrathin-film SOI transistors requires the correct balance between the current gain and the impact ionization rate. The current gain is strongly dependent upon bandgap narrowing and SOI film doping. Impact ionization may be reduced, and the holding voltage increased, in ultrathin-film devices with a heavily doped film and the inclusion of an optimized LDD. >
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