Improved physical modeling of submicron MOSFETs based on parameter extraction using 2-D simulation

Abstract

Hot electron effects for n-channel submicron MOSFET devices have been analyzed on the basis of accurate physical models. The PISCES-Monte Carlo scheme is implemented to calculate impact ionization coefficients and predict accurately the generation of electron-hole pairs. The coupling scheme also provides important physical parameters and constants for developing substrate and gate current models as well as an improved mobility model, especially for high drain and gate bias conditions. The analytical models for impact ionization, thermionic emission and mobility are incorporated into the PISCES program and give accurate predictions compared with experimental results. These models predict the peak and saturated transconductance curves for the high drain voltage of LDD MOSFET devices.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>