Abstract
A single photon avalanche diode (SPAD) device with deep P-well is proposed, which is protected by surrounding P-implantation layer, P buried layer and P+ buried layer. The P+ buried layer of this SPAD device has great help to enhance the uniformity of electric field in avalanche multiplication region. The primary contribution of the P buried layer is to improve the electric field at the edge. Therefore, the two buried layer of the SPAD device have contributed to the improvement of photon detection efficiency (PDE). With deep P-well instead of deep N-well, the parasitic competing p-n junction of traditional SPAD can be eliminated to improve PDE. A modeling and simulation method is applied by using some important parameters which is obtained by TCAD simulator SILVACO to predict the performance of PDE and DCR. Model calculation shows that this SPAD achieves a high peak PDE of 34%, while its dark count rates (DCR) is below 87Hz at 3V excess bias voltage in room temperature.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
