Abstract
In this work, the photoelectric properties of ZnO1-x/graphene heterostructures were investigated. Such ZnO1-x/graphene heterostructures were constructed from non-stoichiometric zinc oxide (ZnO1-x) film and graphene by first depositing ZnO1-x layer through radio frequency magnetron sputtering onto silicon wafers with SiO2 layer and then transferring graphene via a wet method. It was revealed that such heterostructures could have improved photoelectric properties. Compared with ZnO1-x films, the absorbance of the ZnO1-x/graphene heterostructures in visible and near-infrared region was enhanced; and due to the high conductivity of graphene, the photocurrent was significantly enhanced both in dark and under irradiation of a 700 nm light. By calculating the absolute current gain, it was revealed that the fabricated ZnO1-x/graphene heterostructures would have a higher current gain. Thus, such ZnO1-x/graphene heterostructures would be promisingly applied in visible light to near-infrared detection devices.
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