Improved performances of Ge2Sb2Te5 based phase change memory by W doping

Abstract

W-doped Ge2Sb2Te5 materials have been investigated for phase change memory applications. W0.08(Ge2Sb2Te5)0.92 phase change film exhibits a higher crystallization temperature (255 °C), better data retention of 10 years at 183 °C, and higher crystalline resistance compared with traditional Ge2Sb2Te5. The Wx(Ge2Sb2Te5)1−x films crystallize into a stable face-centered cubic phase with uniform crystal grains. Phase-change memory device based on W0.08(Ge2Sb2Te5)0.92 shows short operation time (10 ns) and good endurance (6 × 105 cycles). Wx(Ge2Sb2Te5)1−x material is a promising candidate for phase-change memory applications that require good data retention and fast operation speed.