Abstract
The performance of quantum dots light-emitting diodes (QLEDs) were enhanced by incorporating Au into NiO hole injection layer (HIL). Highly bright green QLEDs with a maximum luminance of 31210 cd m-2 and current efficiency of 6.5 cd A-1, exhibiting 50% improvement compared with device without Au NP. The improved performance may be attributed to the significant increase in the hole injection rate as a result of the introduction of Au NPs and the good matching between the resonance frequency of the localized surface Plasmon resonance (LSPR) generated by Au NPs and QDs, as well as the suppressed Auger recombination of QDs layer due to the LSPR-induced near-field enhanced radiative recombination rate of excitons.
Published Version
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