Abstract
For organic photodetectors (OPDs), in order to realize high incident-photon-to-current conversion efficiency (IPCE) and high on/off ratio, the characteristics of hole-only devices and polymer photodetectors with indium–tin-oxide (ITO) modified by phosphonic acid-based self-assembled monolayer treatment in a short time are investigated. 1H,1H,2H,2H-Perfluorooctanephosphonic acid (FOPA) treatment results not only in lowering of the injection barrier at the ITO/organic layer interface but also in the lowering of the contact resistance between ITO and the organic layer. An OPD based on a blend of a donor, poly(9,9-dioctylfluorene-co-bithiophene) (F8T2), and an acceptor, fullerene derivative [6-6]phenyl-C61-butyric acid methyl ester (PCBM) with FOPA treatment exhibits blue-light sensitivity and IPCE of approximately 75% at −4V. For the F8T2:PCBM device with FOPA, the IPCE is improved, and the dark current hardly increases. F8T2:PCBM device with FOPA treatment exhibits high on/off ratio, wide detector dynamic range and cut-off frequency of more than 10MHz under reverse voltage.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
