Abstract
In this study, the improvement of detectivities D* at the wavelength of 8 and 9μm of InAs0.07Sb0.93 photoconductors are provided. InAs0.07Sb0.93, InAs0.05Sb0.95 and InAs0.03Sb0.97 thick epilayers were grown on InAs substrates by melt epitaxy (ME). The photoconductors were fabricated based on the epilayers. Ge immersion lenses were set on the devices. At room temperature, the photoresponse wavelength range was 2–10μm. The peak detectivities Dλp* (6.5 μm, 800) were larger than 1.0×109cmHz1/2W−1. The detectivities D* at 8 and 9 μmof InAs0.07Sb0.93 detectors were raised to 5.01×108cmHz1/2W−1 and 2.92×108cmHz1/2W−1 respectively, which are higher than that of InAs0.05Sb0.95 and InAs0.03Sb0.97 detectors. It benefits from arsenic composition increasing in the epilayers.
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