Abstract
Al0.15Ga0.85As/In0.25Ga0.75As pseudomorphic modulation-doped field-effect transistors and strained InxGa1−xAs/GaAs p-i-n photodiodes have been fabricated on patterned (100)-GaAs substrates and characterized. Compared with devices made on planar substrates, small area growth improves the dc transconductance by 40% and current gain cutoff frequency by 50% in the transistors. The photodiodes grown in small recesses (∼30 μm) exhibit 2–4 times higher quantum efficiency than those grown on planar substrates.
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