Improved Performance of GaN-Based Light-Emitting Diodes via AlInGaN/InGaN Electron-Emitting Layer

Abstract

Improved performance of GaN-based light-emitting diodes (LEDs) using AlInGaN/InGaN multiple quantum wells (MQWs) as an electron-emitting layer inserted between the active MQW region and n-GaN cladding layer has been demonstrated. Compared with the conventional electron-emitting layer of GaN/InGaN MQWs, the light output power can be further enhanced by about 20%, while maintaining almost the same forward voltage. As the injection current increases, the external quantum efficiency of LEDs with the AlInGaN/InGaN MQW electron emitting layer exhibits a smaller efficiency droop. In addition, the negative electrostatic discharge endurance voltage of LEDs with the AlInGaN/InGaN MQW electron emitting layer is significantly higher.