Abstract
In this letter, we demonstrate a high-threshold-voltage and high-current-density normally-off SiN/AlN/ GaN-on-Si MIS-HEMT with <i>in situ</i> low-damage H<sub>2</sub>/N<sub>2</sub> plasma pretreatment. The <i>in situ</i> plasma pretreatment was performed in a plasma enhanced atomic layer deposition (PEALD) system prior to the PEALD-AlN deposition, which effectively suppress the interface trap densities between the AlN/GaN interface and increase the mobility of electrons to 198.80 cm<inline-formula> <tex-math notation="LaTeX">$^{{2}}/\text {V} \cdot \text {s}$ </tex-math></inline-formula>. Therefore, the devices demonstrate state-of-art characteristics with a competitive maximum drain current of 683.75 mA/mm at <inline-formula> <tex-math notation="LaTeX">${V} _{\textit {GS}} =15\text{V}$ </tex-math></inline-formula> and a high threshold of 6.28 V. The devices also show ON/OFF current ratio of <inline-formula> <tex-math notation="LaTeX">$10^{{8}}$ </tex-math></inline-formula> and off-state breakdown voltage of 1778 V.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
