Abstract
This study performs various thermal treatments on Indium Tin Oxide (In2O3 + SnO2) films, which are the transparent conducting layers for GaN light emitting diodes (LEDs). Structural characterization by high-resolution transmission electron microscopy (HRTEM) indicates that the ITO films have the least crystalline grain boundary and greatest grain size after thermal treatment at 580 °C for 10 min, which gives a minimum forward voltage of LEDs of 2.95 V and the maximum light output power of LEDs is 177.51 mW at 125 mA. The high output intensity in the near horizontal direction is also greater than that for treatment at other temperatures.
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