Abstract
The contact resistivity of Au-Ge contacts on n-type GaAs was reduced by about one order of magnitude by replacing the usual Ni top layer with an SiO 2 layer. Surface coverage and edge definition of the contact areas can be optimised by proper choice of process parameters, making this technology suitable for submicrometre device processing.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have