Abstract
An improvement in off-state leakage current and cutoff frequency for AlGaN/GaN high electron mobility transistors (HEMTs) is investigated. Raman spectroscopy confirms the low stress of GaN heterostructure grown on a silicon-on-insulator (SOI) substrate. The HEMT devices on SOI substrate show lower knee voltage (Vknee) and on-resistance (RON) compared to those on the high-resistive silicon (HR-Si) substrates by 20.8% and 30.4%, respectively. Off-state leakage current is reduced to 10−7 A mm−1, and the cutoff frequency (f t ) is increased by 19.2% as compared to HR-Si substrate. Thus, the GaN/SOI technology is proven to be a potential technology for high-frequency communication applications.
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