Abstract
To overcome the short channel effects of a regular field effect diode (FED), this paper proposes a novel nanoscale FED. The novel FED has a simple structure that can be fabricated by the standard CMOS process technology. Both regular and novel FEDs are simulated using TCAD tools as a semiconductor drift-diffusion solver. Simulation results show that the novel device can operate properly at nanoscale channel length. The I ON/I OFF ratio of the novel FED is several orders of magnitude higher than of the regular FED.
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