Abstract
A new edge termination with ${\rm SiO}_{2}$ and ${\rm Si}_{3}{{\rm N}_4}$ passivating layers has been developed and is shown to be a very effective method for improving energy resolution of $20 ~\mu \hbox{m}$ n-type 4H-SiC epilayer Schottky barrier radiation detectors. The junction properties of the fabricated detectors before and after edge termination were studied by current-voltage (I-V) and capacitance-voltage (C-V) measurements. A thermionic emission model applied to the forward I-V characteristics showed surface barrier height of $\sim 1.4 ~\hbox{eV}$ and diode ideality factor of $\sim 1.1$ . The C-V measurements showed a doping concentration of $1.8 \times {10^{14}} ~\hbox{cm}^{ - 3}$ which ensured a fully depleted ${(\sim 20 ~\mu \hbox{m})}$ detector at bias voltages as low as $\sim 70 ~\hbox{V}$ . Alpha spectroscopy measurements revealed an improved energy resolution from $\sim 0.7 \% $ to $\sim 0.4\% $ for 5.48 MeV alpha particles. Deep level transient spectroscopy (DLTS) measurements have shown a decreased concentration of ${{\rm Z}_{1/2}}$ defect levels in detectors following edge termination.
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