Abstract

We report the development of an edge termination by depositing thin Si3N4 passivating film on 4H-SiC epilayer based radiation detector. The edge termination method is shown to be very effective for improving both the detector leakage current and radiation detection performance compared with that of a conventional detector fabricated from the same parent wafer. The detector leakage current was found to have improved two orders of magnitude. Significant improvement in radiation detection performance was shown from alpha spectroscopy measurements prior and subsequent to Si3N4 edge termination. Deep Level Transient Spectroscopy (DLTS) measurements revealed a reduction in life-time killing defects of detectors with Si3N4 edge termination which could be related to the observed improvements in radiation detection performance.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.