Improved modeling of flicker noise including velocity saturation effect in FinFETs and experimental validation

Abstract

BSIM-CMG can fit low frequency noise spectrum in the linear region of operation, but deviates in the saturation region of operation, because the noise model used in BSIM-CMG (and also in other MOSFET models) does not include the impact of velocity saturation. In this work, we formulate a unified noise model including the velocity saturation effect and show that the new model accurately captures the experimental data. Additionally, the developed model can be easily implemented in a circuit simulator, with slight modification in the present low frequency noise model. Although this model is developed for BSIM-CMG, it is a generic model and can be used in any industry-standard model like BSIM-BULK, BSIM-IMG, etc. This model is validated with experimental data of 14 nm FinFET technology.