Abstract
Microwave and noise performances of a highly strained InGaP/In0.33Ga0.67As pseudomorphic high electron mobility transistor (p-HEMT) grown on a patterned GaAs substrate and a conventional InGaP/In0.22Ga0.78As p-HEMT grown on a non-patterned GaAs substrate were compared. The highly strained InGaP/In0.33Ga0.67As p-HEMT grown on the patterned GaAs substrates showed substantial improvements in DC (drain saturation current and transconductance), microwave (fT and fmax), and low-frequency and high-frequency noise performances compared with those of the conventional InGaP/In0.22Ga0.78As p-HEMT grown on the non-patterned GaAs substrate.
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