Abstract
Highly strained InGaP/In/sub 0.33/Ga/sub 0.67/As pseudomorphic high electron mobility transistor (p-HEMT) structures were grown on patterned and non-patterned GaAs substrates. Performance of the highly strained p-HEMTs grown on patterned substrates was compared with those of the highly strained p-HEMTs and conventional InGaP/In/sub 0.22/Ga/sub 0.78/As p-HEMTs grown on non-patterned substrates. The highly strained p-HEMTs grown on patterned substrates showed substantial improvements in dc (transconductance and drain saturation current) and rf(cut-off frequency: f/sub T/ and maximum oscillation frequency: f/sub max/) performances as compared with those of the p-HEMTs grown on non-patterned substrates. The results indicate the potential of high-performance p-HEMTs having a high strain in the channel using an epitaxial growth on patterned substrates.
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