Abstract
Compared to Ti/Mn doped ZnO/Pt (Ti/MZO/Pt) device, the Ti/MZO/ZnO/Pt device exhibits more excellent resistive switching (RS) performances and larger magnetic variation behaviors. The RS behavior is attributed to formation and rupture of oxygen vacancy (Vo) based conductive filaments (CFs), and magnetic variation was demonstrated by bound magnetic pole (BMP) model. Here ZnO buffer layer contribute to improve the RS and magnetism.
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