Abstract
The optical properties of various GaAs/AlGaAs single and multiple quantum well (QW) structures grown by metalorganic vapour phase epitaxy, are studied by means of variable temperature (4–295 K) photoluminescence (PL). It is found that the growth of up to 25 periods of AlGaAs/GaAs in a multiple QW structure results in an overall improvement in the 12 K PL response, compared with a single period QW structure. Similarly, single GaAs/AlGaAs QWs grown on top of an AlGaAs/GaAs multiple QW buffer also exhibit superior luminescence properties. The increase in intensity and corresponding decrease in the PL linewidth is explained by the effective trapping at each heterointerface of the diffusing impurities, which appear to originate from the substrate.
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