Improved Low-Voltage Sensing Performance in MIS(p) Tunnel Diodes by Oxide Thickening at the Gate Fringe

Abstract

The effect of selective-area oxide thickening in metal–insulator–semiconductor (MIS) tunnel structures on their current–voltage characteristics was investigated in this article. Under a low applied voltage ( $> 100\times $ with respect to the device with thin-only oxide, and so was the photocurrent $> 100\times $ larger under an illuminance of 100 lx. With such an improved sensing performance, the ET MIS tunnel diode may find its use in low-cost sensor applications.