Improved Low‐Temperature Solution‐Growth of CsPbBr3‐nCln Single Crystals for X‐Ray Detection

Abstract

AbstractThe dark current drift caused by severe ion migration in all‐inorganic perovskite CsPbBr3 degrades the stability of X‐ray detection performance under a high electric field. The halogen doping is an effective method to improve the properties of the perovskites. In this work, the all‐inorganic Cl‐doped perovskites CsPbBr3‐nCln (n=0, 0.1 and 0.5) single crystals were grown by a modified low‐temperature inverse temperature crystallization (ITC) method with the growth temperature lower than the phase transition point. The trap density decreased to 3.05×1010 cm−3 and the carrier mobility increased to 124.75 cm2 V−1 s−1 for the optimum component of CsPbBr2.9Cl0.1. Furthermore, by designing the detector with an asymmetric electrode configuration, CsPbBr2.9Cl0.1 detector showed super low dark current and an outstanding hard X‐ray induced photo‐response under a high voltage of 200 V. Consequently, the CsPbBr2.9Cl0.1 perovskite detector delivers a high sensitivity (5593.24 μC Gyair−1 cm−2) and a low detection limit (0.68 μGyair s−1). Our low temperature solution grown Cl‐doped all‐inorganic perovskite single crystals efficiently improve the photoelectric properties and enhance the X‐ray detection performance.