Abstract
Limits on ${\ensuremath{\beta}}^{+}$EC and ECEC processes in $^{112}\mathrm{Sn}$ have been obtained using a 380 cm${}^{3}$ HPGe detector and an external source consisting of 100 g enriched tin (94.32% of $^{112}\mathrm{Sn}$). A limit with 90% C.L. on the $^{112}\mathrm{Sn}$ half-life of $1.3\ifmmode\times\else\texttimes\fi{}{10}^{21}$ yr for the ECEC(0$\ensuremath{\nu}$) transition to the ${0}_{3}^{+}$ excited state in $^{112}\mathrm{Cd}$ (1871 keV) has been established. This transition has been discussed in the context of a possible enhancement of the decay rate. The limits on other ${\ensuremath{\beta}}^{+}$EC and ECEC processes in $^{112}\mathrm{Sn}$ have also been obtained on the level of $(0.1\ensuremath{-}1.6)\ifmmode\times\else\texttimes\fi{}{10}^{21}$ yr at the 90% C.L.
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