Improved limits on β+EC and ECEC processes in 112Sn

Abstract

Limits on β+EC and ECEC processes in 112Sn have been obtained using a 380 cm3 HPGe detector and an external source consisting of 100 g enriched tin (94.32% of 112Sn). A limit with 90% C.L. on the 112Sn half-life of 1.3×1021 y for the ECEC(0ν) transition to the 03+ excited state in 112Cd (1871 keV) has been established. This transition has been discussed in the context of a possible enhancement of the decay rate. The limits on other β+EC and ECEC processes in 112Sn have also been obtained on the level of (0.1−1.6)×1021 y at the 90% C.L.