Abstract
K0.4Na0.6NbO3 (KNN) thin films were prepared by chemical solution deposition. The V2O5 seed layer was introduced to modify the quality and electric properties of the thin films. The results show that the V2O5 seed layer can reduce the crystallization temperature to 425°C and largely improve the leakage property of the KNN thin films. The KNN thin film with 5nm thickness V2O5 seed layer exhibits high ferroelectric and dielectric properties (2Prmax=26μC/cm2, ε=796, tanδ=0.04) and low leakage current density (4.0×10−5A/cm2) at the electric field of 350kV/cm at room temperature. By adding the V2O5 seed layer, the conduction mechanism changes from SCLC mechanism to Ohmic mechanism in the lower electric field (<200kV/cm), and the Schottky emission mechanism is replaced by the Poole–Frenkel emission mechanism in the higher electric field (>200kV/cm).
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