Improved isolation RF MEMS switch with post release ashing

Abstract

RF MEMS switches have moving microstructures which are realized either by dry release method or by wet releasing process. In dry release process, suspended bridges gets curled up due to high process temperature while in wet release method, surface of the released devices is get contaminated which affects the final performance of the device. In this paper, a mixed release process of wet and dry is presented to release the stiction free suspended microstructures. Contamination from the devices is removed by plasma cleaning. Isolation of the device under test has been improved to 22 from 15 dB after plasma exposure.