Abstract
Effects of preoxidation NH3 treatment on p-type 6H–SiC/SiO2 interface properties were investigated as compared to conventional thermally oxidized devices. It was found that NH3 treatment before oxidation can reduce the SiC/SiO2 interface states and fixed oxide charge. Furthermore, less shift of flatband voltage, and smaller increases of effective oxide charge and interface states during high-field stress were observed for the NH3 pretreated devices.
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