Abstract
AbstractWe report a stacked Y2O3/TiOx resistive random access memory (RRAM) device, showing good high‐temperature switching characteristics of extremely low reset current of 1 μA at 150 °C, large off/on resistance window (>200) at 150 °C, large rectification ratio of ∼300 at 150 °C and good current distribution at 85 °C. The good rectifying property, lower high‐temperature sneak current and tighter high‐temperature current distribution can be attributed to the combined results of the oxygen vacancies in TiOx and the related carrier depletion effect.magnified image(© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Schedule a callMore From: physica status solidi (RRL) – Rapid Research Letters
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