Improved heteroepitaxy of κ-Ga2O3 on c-plane sapphire by initial mist flow stabilization during mist chemical vapor deposition

Abstract

Kappa-phase gallium oxide (κ-Ga2O3) is a metastable gallium oxide polymorph and an ultrawide bandgap semiconductor with potential applications in various electronic and optoelectronic devices. In this study, we present the effect of mist flow stabilization during the initial stages of mist chemical vapor deposition process on the crystal quality of heteroepitaxial thin films of κ-Ga2O3 grown on c-plane sapphire. Two κ-Ga2O3 films were grown using the same growth parameters with the only differing factor being the stabilization of the initial mist flow. Structural and optical properties of the films were characterized. Both processes resulted in epitaxial growth; however, controlling the initial mist flow leads to an improved Ga2O3/Al2O3 interface and superior crystal quality. The film grown with regulated mist flow exhibited an optical bandgap of 4.93 eV, a smooth surface with a root mean square roughness of 1.56 nm and a rocking curve full-width half-maximum value of 0.17°. Also, Ti/Au deposition on κ-Ga2O3 resulted in an interface resembling that of β-Ga2O3 and Ti/Au, explaining previous reports of ohmic behavior between κ-Ga2O3 and Ti/Au contacts.