Abstract
α-Ga2O3 is a semi-stable phase of Ga2O3 and is known as an ultra-wide-bandgap semiconductor material. α-(AlGa)2O3 alloys are important for their applications in electronic and optoelectronic devices. We investigated the growth mechanism and process of α-(AlGa)2O3 alloys by mist chemical vapor deposition using acetylacetonated Al and Ga aqueous solutions. The contribution of acetylacetonated Al ions to the epitaxial growth was investigated. The effects of an anchoring mechanism on the mosaic spread were experimentally evaluated. Investigating X-ray diffraction profiles, strain relaxation processes in film formations are discussed.
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