Abstract
An HBT amplifier with a post-distortion-type linearizer utilizing a base-collector junction diode shows more than 8-dB improvement of adjacent channel power ratio, and the collector linearizer comprising a reverse biased base-collector junction diode requires no additional dc power consumption and has no deterioration of RF performance. The linearization technique of post-distortion compensates the nonlinearity of HBTs, which arises from the C/sub bc/ variation due to a large-signal swing.
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