Abstract
The open-collector method for determination of the emitter series resistance is analysed. From basic semiconductor equations an accurate relation for the collector-emitter voltage which is valid for high injection into the low-doped epitaxial collector region is derived. This new description allows us to predict the non-linear V/sub CE/(I/sub E/) behaviour which depends on properties of the collector region and the parasitic p-n-p transistor. Furthermore the relation provides an improved extraction procedure for the emitter resistance from open-collector measurements. This method is applied to advanced integrated bipolar transistors and its accuracy is demonstrated by comparing the results to that of the Ning and Tang (1984) method and by device simulations.
Published Version
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