Abstract
Sr‐doped PbZrO3 antiferroelectric (AFE) thin films have been fabricated on the platinum‐buffered silicon substrates via the sol–gel technique. The temperature‐dependent dielectric properties results indicated that the AFE phase was stabilized for the Sr‐modified PbZrO3 thin films with a Curie temperature of 251°C. The recoverable energy density and energy efficiency of the Sr‐doped PbZrO3 thin films were enhanced by the doping of strontium. Compared with the pure PbZrO3 AFE thin films, the performance against fatigue of the Sr‐doped PbZrO3 thin films were also improved greatly.
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