Abstract
We investigate the effects of high-pressure hydrogen annealing (HPHA) on W/ferroelectric Al:HfO2/interface layer (IL)/Si stacks. With HPHA, degradation in remnant polarization is observed in the pristine state due to ferroelectric domain pinning. However, after wake-up, a comparable remnant polarization is observed by domain de-pinning. In addition, HPHA improves the quality current and low interface trap density are maintained up to 107 cycles. As a result, the endurance improves up to 109 cycles and a stable retention is achieved up to 104 s at 85 °C. These results show that the HPHA can be a crucial process for ferroelectric HfO2-based transistor applications.
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