Abstract
We investigated the effect of high-pressure hydrogen annealing (HPHA) on a Pt/Nb-doped SrTiO 3 Schottky junction for nonvolatile memory applications. Hysteretic current-voltage (I-V) characteristic curves reveal that the HPHA-treated Schottky junction interface has a higher resistance ratio than the control sample in dc bias sweep. The HPHA sample also exhibits switching behavior by pulsed voltage stress with excellent electrical characteristics including voltage pulse duration as short as 1 μs, endurance cycles of up to 10 6 times, and retention time as long as 10 5 s. These indicate that HPHA improved resistance switching characteristics of the Schottky junction.
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