Abstract
We have improved the electron mobility of AlxIn1-xSb/InAsySb1-y/AlxIn1-xSb heterostructures grown by molecular beam epitaxy. By using Al0.15In0.85Sb as high-resistivity barrier layers and by using InAsySb1-y (whose composition was chosen to be lattice-matched with the Al0.15In0.85Sb) as a channel layer, high electron mobility exceeding 24,000 cm2·V-1·s-1 was obtained at room temperature. This value is an order of magnitude larger than that of an Al0.15In0.85Sb/InSb/Al0.15In0.85Sb lattice-mismatched heterostructure grown as a reference. Mobility is improved by using an InAsySb1-y channel because the lattice-mismatch between the barrier and channel layers is minimized.
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