Abstract
InxGa1 − xAs/In0.52Al0.48As/InP HEMT structures for low noise application were grown by MBE onto InP substrates. The purpose of this work is to enhance the electron mobility of InGaAs/InAlAs epilayers for InP-based HEMT devices by changing the epitaxial structure and growth process. The influence of the growth temperature profile, growth interruption, and structural parameters on the electrical characteristics have been systematically studied based on Hall measurements. The growth of the channel and spacer layer with interruption results in an increase of mobility due to an improvement of interface abruptness. To improve the mobility characteristics, graded and pseudomorphic InxGa1 − xAs were adopted as a channel layer. With the graded composition channel layer the mobilities of 11 800 cm2/V · s (300 K) and 50 900 cm2/V · s (77 K) were obtained near a spacer thickness of 30Åand a sheet carrier density of 2.5 × 1012cm−2.
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