Abstract
We investigate the electron-injecting properties of a ZnO substrate modified by a thin layer of solution-processed Cs2CO3 into poly(9,9′-dioctylfluorene)-co-benzothiodiazole (F8BT). Ultraviolet photoemission spectroscopy studies reveal that in the case of coannealed F8BT/Cs2CO3 films, the Fermi level is pinned at the lowest unoccupied molecular orbital of the F8BT, indicating significant n-doping of the polymer. X-ray photoemission spectroscopy measurements reveal the presence of Cs2CO3 in the coannealed F8BT/Cs2CO3 films. I-V measurements in single carrier devices show a significant improvement in the electron injection of the coannealed F8BT/Cs2CO3, in agreement with the observed n-doping of the polymer upon coannealing.
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