Abstract
The authors report on the fabrication and temperature-dependent current–voltage and electroluminescence properties of p-ZnO:As/n-Si heterojunction diodes. The As-doped p-ZnO material was prepared by out-diffusion of arsenic atoms from a sandwiched GaAs interlayer on patterned SiO2/Si substrates. The introduction of hollow-shaped SiO2 patterned layer promotes the efficiency of carrier injection into the active layer and considerably lowers the emission onset of the studied diode. The current–voltage characteristics of the heterojunction were detailedly studied in the temperature range of 21–120 °C to determine the dominant carrier transport mechanisms in different bias regions. The reverse saturation current, barrier height, and ideality factor were estimated from the thermionic emission model and found to be highly temperature dependent. An improved electroluminescence performance of the studied diode featuring an ultralow emission onset and an acceptable operation stability shows the potential of our app...
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call