Improved electrical properties of silicon-incorporated anodic niobium oxide formed on porous Nb–Si substrate

Abstract

In the present study, porous Nb–Si alloy films with isolated nano-column morphology have been successfully developed by oblique angle magnetron sputtering on to aluminum substrate with concave cell structure. The deposited films are amorphous with the 15 at% silicon supersaturated into niobium. The porous Nb-15 at% Si films, as well as niobium films with similar morphology, are anodized at several voltages up to 50 V in 0.1 mol dm −3 ammonium pentaborate electrolyte. Due to the presence of sufficient gaps between neighboring columns, the gaps are not filled with anodic oxide, despite the large Pilling–Bedworth ratio (for instance, 2.6 for Nb/Nb 2O 5) and hence, a linear correlation between the reciprocal of capacitance and formation voltage is obtained for the Nb-15 at% Si. From the comparison with the anodic films formed on porous niobium films, it has been found that silicon addition improves the thermal stability of anodic niobium oxide; the change in capacitance and increase in leakage current become small for the Nb–Si. The findings indicate the potential of oblique angle deposition to tailor porous non-equilibrium niobium alloy films for high performance niobium-base capacitor.